| 摘要 |
The present invention relates to a repeller for an ion implanter and an ion generation device. According to the present invention, components such as a repeller, a cathode, a chamber well and a slit member constituting an arch chamber of an ion generation device for an ion implantation, used in the manufacturing of a semiconductor device, are provided with a coating structure containing a semi carbide layer for a thermal deformation stabilization purpose, a wear protection purpose or a deposition peeling resistance purpose, thereby, an ion implantation process becomes possible without any distortion of an ion generation position or any distortion of equipment, in addition, electrons can be uniformly reflected into the arch chamber, thereby, a uniformity of plasma can be improved, thus it is possible to improve an efficiency of decomposition of an ion source gas and in addition, it is possible to provide components for an ion implanter having a significantly improved life compared with conventional components and possible to provide the ion generation device including the same. |
