| 摘要 |
Provided is a transistor having small parasitic capacitance, a transistor having high frequency properties, or a semiconductor device including the transistor. An oxide semiconductor film includes a first area in which a first conductive film and the oxide semiconductor film are in contact with each other; a second area in which a first insulating film and the oxide semiconductor film are in contact with each other; a third area in which a third insulating film and the oxide semiconductor film are in contact with each other; a fourth area in which a second insulating film and the oxide semiconductor film are in contact with each other; and a fifth area in which a second conductive film and the oxide semiconductor film are in contact with each other. The first insulating film is placed on the oxide semiconductor film and the first conductive film; the second insulating film is placed on the second conductive film and the oxide semiconductor film; the third insulating film is placed on the first insulating film, the second insulating film, and the oxide semiconductor film; and the third conductive film and the oxide semiconductor film include an area in which the third conductive film and the oxide semiconductor film are overlapped with each other by interposing the third insulating film therebetween. |
