HOLE-BLOCKING SILICON/TITANIUM-OXIDE HETEROJUNCTION FOR SILICON PHOTOVOLTAICS
摘要
<p>A hole-blocking silicon/titanium-oxide heterojunction for silicon photovoltaic devices and methods of forming are disclosed. The electronic device includes at least two electrodes having a current path between the two electrodes. The electronic device also includes a heterojunction formed of a titanium-oxide layer deposited over a Si layer and being disposed in the current path. The heterojunction is configured to function as a hole blocker. The first electrode may be electrically coupled to the Si layer and a second electrode may be electrically coupled to the titanium-oxide layer. The device may also include a PN junction disposed in the Si layer, in the current path. The device may also include an electron-blocking heterojunction on silicon in the current path.</p>
申请公布号
EP2826070(A4)
申请公布日期
2015.11.04
申请号
EP20130761284
申请日期
2013.03.14
申请人
THE TRUSTEES OF PRINCETON UNIVERSITY
发明人
AVASTHI, SUSHOBHAN;STURM, JAMES C.;MCCLAIN, WILLIAM E.;SCHWARTZ, JEFFEREY