HK/MG process flows for P-type semiconductor devices

摘要

The present disclosure provides semiconductor device structures with a first PMOS active region and a second PMOS active region provided within a semiconductor substrate. A silicon germanium channel layer is only formed over the second PMOS active region. Gate electrodes are formed over the first and second PMOS active regions, wherein the gate electrode over the second PMOS active region is formed over the silicon germanium channel.

主权项

1. A method of forming a semiconductor device structure, comprising:
providing a first PMOS active region and a second PMOS active region in a semiconductor substrate; forming a first masking pattern over said first PMOS active region; forming a silicon germanium layer over said second PMOS active region in accordance with said first masking pattern; removing said first masking pattern; forming gate electrode structures over said first and second PMOS active regions; forming a second masking pattern over said first PMOS active region subsequently to said formation of gate electrode structures; performing a first implantation process in the presence of said second masking pattern with a first halo implant dose for forming halo regions in said second PMOS active region; removing said second masking pattern; forming a third masking pattern over said second PMOS active region; and performing a second implantation process in the presence of said third masking pattern with a second halo implant dose for forming lightly doped halo regions in said first PMOS active region, said second halo implant dose being substantially smaller than said first halo implant dose.