发明名称 |
Methods and devices for avoiding lower page corruption in data storage devices |
摘要 |
A data storage device may comprise a plurality of Multi-Level Cell (MLC) non-volatile memory devices comprising a plurality of lower pages and a corresponding plurality of higher-order pages. A controller may be configured to write data to and read data from the plurality of lower pages and the corresponding plurality of higher-order pages. A buffer may be coupled to the controller, which may be configured to accumulate data to be written to the MLC non-volatile memory devices, allocate space in the buffer and write the accumulated data to the allocated space. At least a portion of the accumulated data may be written in a lower page of the MLC non-volatile memory devices and the space in the buffer that stores data written to the lower page may be de-allocated when all higher-order pages corresponding to the lower page have been written in the MLC non-volatile memory devices. |
申请公布号 |
US9177638(B2) |
申请公布日期 |
2015.11.03 |
申请号 |
US201213675913 |
申请日期 |
2012.11.13 |
申请人 |
Western Digital Technologies, Inc.;Skyera, LLC |
发明人 |
Danilak Radoslav;Mullendore Rodney N.;Tomlin Andrew J.;Jones Justin;Yang Jui-Yao |
分类号 |
G11C11/56;G11C11/16;G06F12/02 |
主分类号 |
G11C11/56 |
代理机构 |
Wilmer Cutler Pickering Hale and Dorr LLP |
代理人 |
Wilmer Cutler Pickering Hale and Dorr LLP |
主权项 |
1. A data storage device, comprising:
a plurality of Multi-Level Cell (MLC) non-volatile memory devices comprising a plurality of lower pages and a corresponding plurality of higher-order pages; a controller coupled to the plurality of MLC non-volatile memory devices and configured to write data to and read data from the plurality of lower pages and the corresponding plurality of higher-order pages; and a buffer comprising non-volatile memory, the buffer being separate from the plurality of MLC non-volatile memory devices and coupled to the controller; wherein the controller is configured to:
accumulate data to be written to the MLC non-volatile memory devices;allocate space in the buffer and write the accumulated data to the allocated space in the buffer;write at least a portion of the accumulated data in a lower page of the MLC non-volatile memory devices;detect a loss of power;read data from the buffer and write at least a portion of the read data to the MLC non-volatile memory devices after power is restored to the data storage device subsequent to detecting the loss of power; andde-allocate space in the buffer that stores data written to the lower page when all higher-order pages corresponding to the lower page have been written in the MLC non-volatile memory devices. |
地址 |
Irvine CA US |