| 发明名称 |
METHOD OF FABRICATING LAYER COMPRISING METAL AND CHALCOGEN, AND TRANSISTOR COMPRISING THE SAME |
| 摘要 |
Provided is a method for manufacturing a thin film. The method for manufacturing a thin film comprises the following steps of: preparing a substrate; providing a first source having chalcogen onto the substrate; and forming a 2-dimensional compound layer of the chalcogen and metal on the substrate by providing a second source having the metal onto the substrate. |
| 申请公布号 |
KR101565255(B1) |
申请公布日期 |
2015.11.03 |
| 申请号 |
KR20140102524 |
申请日期 |
2014.08.08 |
| 申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
HAM, GI YUL;JEON, HYEONG TAG;SHIN, SEOK YOON;PARK, JOO HYUN |
| 分类号 |
H01L21/336;H01L21/40;H01L29/786 |
主分类号 |
H01L21/336 |
| 代理机构 |
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