| 发明名称 | Pattern forming method | ||
| 摘要 | According to one embodiment, a pattern forming method includes forming, on an underlying region, a neutral film having an affinity for first and second polymers, forming a first pinning part having an affinity for the first polymer by irradiating a first region of the neutral film with an energy beam, forming, on the neutral film including the first pinning part, a block copolymer film containing the first and second polymers, and performing a predetermined treatment for the block copolymer film to perform a microphase separation. | ||
| 申请公布号 | US9177825(B2) | 申请公布日期 | 2015.11.03 |
| 申请号 | US201414467213 | 申请日期 | 2014.08.25 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Seino Yuriko |
| 分类号 | H01L21/311;H01L21/027;H01L21/02 | 主分类号 | H01L21/311 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner, LLP | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner, LLP |
| 主权项 | 1. A pattern forming method comprising: forming, on an underlying region, a neutral film having an affinity for first and second polymers; forming a first pinning part having an affinity for the first polymer by irradiating a first region of the neutral film with an energy beam; forming, on the neutral film including the first pinning part, a block copolymer film containing the first and second polymers; forming, on the first pinning part, a pattern including first and second portions formed of the first polymer and a third portion provided between the first and second portions and formed of the second polymer, by performing a predetermined treatment for the block copolymer film to perform a microphase separation; and removing the first and second portions or removing the third portion, wherein forming the neutral film includes: forming a preliminary neutral film; andthinning a portion of the preliminary neutral film, which is formed in the first region. | ||
| 地址 | Tokyo JP | ||