发明名称 High metal ionization sputter gun
摘要 In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.
申请公布号 US9175382(B2) 申请公布日期 2015.11.03
申请号 US201113281316 申请日期 2011.10.25
申请人 Intermolecular, Inc. 发明人 Yang Hong Sheng;Chiang Tony P.;Child Kent Riley;Lang Chi-I;Shao ShouQian
分类号 C23C14/34;H01J37/34;C23C14/35 主分类号 C23C14/34
代理机构 代理人
主权项 1. A method to deposit a material, comprising: applying pulsing power to a sputter gun comprising a target, wherein the pulsing power is alternated between a first low power state and a first high power state according to a first duty cycle; applying RF power to a substrate support positioned below the sputter gun, wherein the RF power is alternated between a second low power state and a second high power state according to a second duty cycle; synchronizing the first duty cycle with the second duty cycle such that the pulsing power repeatedly increases from the first low power state to the first high power state at the same time the RF power increases from the second low power state to the second high power state and the pulsing power repeatedly decreases from the first high power state to the first low power state at the same time the RF power decreases from the second high power state to the second low power state, wherein the first duty cycle and the second duty cycle are each less than 30% such that an average power delivered to the sputter gun is less than about 1 kilowatt; and depositing a layer above a substrate disposed on the substrate support with material ejected from the target of the sputter gun.
地址 San Jose CA US