Semiconductor device having non-volatile memory with data erase scheme

摘要

In a nonvolatile memory device (4) provided in a semiconductor device, when data is erased based on a band-to-band tunneling scheme, supply of a boosted voltage to a memory cell (MC) to be erased is ended when a condition that an output voltage (VUCP) of a charge pump circuit (52) has recovered to a predetermined reference voltage is satisfied and additionally a condition that a predetermined reference time has elapsed since start of supply of the boosted voltage (VUCP) to the memory cell (MC) to be erased is satisfied.

主权项

1. A semiconductor device comprising:
a memory cell transistor having a charge storage portion and storing data based on a change of a threshold voltage depending on an amount of charge in said charge storage portion; a voltage generation unit generating a boosted voltage to be supplied to one main electrode of said memory cell transistor in an erase operation based on a band-to-band tunneling scheme; a detection unit detecting an output voltage of said voltage generation unit and comparing the output voltage with a reference value; and a control unit controlling a timing at which said boosted voltage is supplied in said erase operation, said control unit ending supply of said boosted voltage when a predetermined first reference time has elapsed since start of supply of said boosted voltage and a result of detection and comparison by said detection unit indicates that said boosted voltage has become equal to or more than said reference value.