Substrate with bump structure and manufacturing method thereof

摘要

A manufacturing method of a substrate with a bump structure, a copper layer is formed on a semiconductor substrate, and a nickel layer is formed on the copper layer. A bump structure is composed of the copper layer and the nickel layer, wherein the hardness of the bump structure after annealing process depends on the thickness of the nickel layer to meet the user's demand. The hardness of the bump structure meets the user's demand prevents a glass substrate from cracking when the substrate with the bump structure is bonded with the glass substrate.

主权项

1. A manufacturing method of a substrate with a bump structure includes:
providing a semiconductor substrate having a base, at least one conductive pad and a protective layer, wherein the at least one conductive pad is formed on the base, the protective layer covers the base and comprises at least one first opening for revealing the at least one conductive pad; forming an under bump metallurgy layer for covering the protective layer and the at least one conductive pad, wherein the under bump metallurgy layer electrically connects to the at least one conductive pad and includes a pre-retained portion and a pre-removed portion; forming a photoresist layer for covering the under bump metallurgy layer; patterning the photoresist layer, the patterned photoresist layer comprises at least one second opening for revealing the pre-retained portion of the under bump metallurgy layer; forming a copper layer within the at least one second opening of the photoresist layer, the copper layer electrically connects to the pre-retained portion of the under bump metallurgy layer; forming a nickel layer within the at least one second opening of the photoresist layer, the nickel layer is formed on top of the copper layer and electrically connects to the copper layer, wherein a bump structure is composed of the nickel layer and the copper layer, the nickel layer comprises a top surface and a bottom surface, a vertical distance between the top surface and the bottom surface is the thickness of the nickel layer, wherein the thickness of the nickel layer depends on a calculation formula H=12.289D+96.674, H means the hardness of the bump structure after annealing process, the unit of the hardness of the bump structure after annealing process is Hv, D means the thickness of the nickel layer, and the unit of the thickness of the nickel layer is um; removing the photoresist layer for revealing the pre-removed portion of the under bump metallurgy layer; and removing the pre-removed portion of the under bump metallurgy layer by using the bump structure as a mask to retain the pre-retained portion of the under bump metallurgy layer.