Methods of fabricating a semiconductor device

摘要

A method of fabricating a semiconductor device includes forming an etch-target layer on a substrate having an alignment key, forming a transparent first pattern on the etch-target layer to face the alignment key, forming an opaque second pattern on the etch-target layer to be adjacent to the first pattern, and etching the etch-target layer using the first pattern and the second pattern as an etch mask.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming an etch-target layer on a substrate having an alignment key; forming a transparent first pattern on the etch-target layer to face the alignment key, including:
forming a mask layer containing an amorphous silicon layer, on the etch-target layer, andthermally treating a portion of the mask layer facing the alignment key to transform a portion of the amorphous silicon layer to a polysilicon layer; forming an opaque second pattern on the etch-target layer to be adjacent to the first pattern; and etching the etch-target layer using the first pattern and the second pattern as an etch mask.