| 摘要 |
The objective of the present invention is to increase light extraction efficiency of a deep ultraviolet light-emitting diode. A conventional LED device (100A) according to an embodiment of the present invention comprises a single crystalline sapphire or AlN crystalline substrate (110) and an ultraviolet light emitting layer (130) where an n type conductive layer (132), a recombination layer (134) and a p type conductive layer (136) are stacked on a side of the substrate layer sequentially. A p type contact layer (150) and a second electrode (160) (reflection electrode) are stacked on the p type conductive layer (136). The ultraviolet light emitting layer and the p type contact layer are mixed with AlN and GaN together. As transmittance of the p type contact layer as to a light emitting wavelength increases, the light extraction efficiency is improved. Also, the present invention provides an electric apparatus having the LED device (100A). |
