Semiconductor device having a fuse element

摘要

A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.

主权项

1. A semiconductor device, comprising:
a substrate; an insulating layer formed over the substrate; a first conductive plate formed in the insulating layer and formed at a first wiring layer; a fuse element formed in the insulating layer and formed at a second wiring layer, the second wiring layer being one level above the first wiring layer; a second conductive plate formed over the insulating layer and formed at a third wiring layer which is one level upper than the second wiring layer; a third conductive plate formed in the insulating layer and formed at the second wiring layer; and a fourth conductive plate formed in the insulating layer and formed at the second wiring layer, wherein the fuse element includes copper, wherein the fuse element is brought into a blow state by a current supplied thereto, wherein the fuse element has a first portion including a meltdown portion, wherein the first conductive plate is formed below the fuse element in a planar view, wherein the second conductive plate is formed above the fuse element in the planar view, wherein the first portion, the third conductive plate, and the fourth conductive plate extend in a first direction of the planar view, and wherein the first portion is located between the third conductive plate and the fourth conductive plate in a second direction of the planar view perpendicular to the first direction.