发明名称 SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING LIGHT-RECEIVING SENSOR AND LIGHT-RECEIVING SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor wafer, the warpage of which is suppressed by setting the parameters of a semiconductor substrate, such as the radius and thickness, variably, and to provide a method of manufacturing a light-receiving sensor, the light-receiving sensor, and the like.SOLUTION: A semiconductor wafer has a semiconductor substrate 100, a dielectric multilayer film 110 formed on the semiconductor substrate 100, and becoming the optical filter of a light-receiving sensor 140, and a light detection area 120 formed on the semiconductor substrate 100. When the poisson ratio of the semiconductor substrate 100 is VS, the Young's modulus is ES, the radius is r, the thickness is b, the stress of the dielectric multilayer film 110 is &sgr;, and the thickness is d, following relationship is satisfied; 1.0×10≥{3×r×d×(1-VS)×&sgr;}/(ES×b).
申请公布号 JP2015192006(A) 申请公布日期 2015.11.02
申请号 JP20140067766 申请日期 2014.03.28
申请人 SEIKO EPSON CORP 发明人 UEMATSU AKIRA;MATSUO ATSUSHI
分类号 H01L27/14;G02B5/28;H01L21/02;H01L21/301;H01L31/0232 主分类号 H01L27/14
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