| 摘要 |
PURPOSE:To prevent the formation of the region having a conspicuous shortage of exposure in a negative type resist layer as well as to reproduce a resist pattern accurately by a method wherein the position of the wave node on a standing wave is varied while being exposed. CONSTITUTION:A semiconductor substrate 8 to be processed, on the upper surface of which a negative type resist layer 7 is coated, and a photomask are superposed and fixed on the stage 6, which is provided on the flat surface at a right angle to an optical axis and movable to the XY direction, located at the lower part of the ultraviolet ray source 5 having the source of light consisting of a mercury lamp. Then, an exposure processing is performed for the prescribed period of time by shifting the stage 6 to the leftward or rightward direction and the forward or backward direction (not shown) as shown by an arrow 11 within the ultraviolet ray irradiated region 10 having the prescribed illumination which is formed in a circular shape having the diameter of about 2-2.5 times of the diameter of the substrate 8. Through these procedures, the reproduction of the pattern can be performed after exposure without formation of the region having a conspicuous shortage of exposure in the photoresist layer caused by the standing wave. |
