THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

摘要

Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure with sequentially-stacked electrodes disposed on a substrate, semiconductor patterns penetrating the electrode structure, and memory elements including a first pattern and a second pattern interposed between the semiconductor patterns and the electrode structure, the first pattern vertically extending to cross the electrodes and the second pattern horizontally extending to cross the semiconductor patterns.

主权项

1. A semiconductor memory device comprising:
a plurality of stacked structures comprising a plurality of electrodes and insulating patterns that are stacked alternately and repeatedly on a substrate; a plurality of semiconductor patterns penetrating the stacked structures; an electrode isolation pattern between the stacked structures; a tunneling layer and a charge storage layer extending between the electrodes and one of the semiconductor patterns and extending between the insulating patterns and the one of semiconductor patterns; and a blocking layer extending between the electrodes and the one of the semiconductor patterns and extending between the insulating patterns and the electrode isolation pattern.