| 发明名称 |
CHEMICAL MECHANICAL POLISHING PAD |
| 摘要 |
A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative. |
| 申请公布号 |
US2015306731(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201414261893 |
申请日期 |
2014.04.25 |
| 申请人 |
Rohm and Haas Electronic Materials CMP Holdings, Inc. ;Dow Global Technologies LLC |
发明人 |
Qian Bainian;DeGroot Marty W. |
| 分类号 |
B24B37/24;H01L21/306 |
主分类号 |
B24B37/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chemical mechanical polishing pad, comprising:
a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, comprising:
an isocyanate terminated urethane prepolymer having 8.5 to 9.5 wt % unreacted NCO groups; and,a curative system, comprising:
10 to 60 wt % of a high molecular weight polyol curative, wherein the high molecular weight polyol curative has a number average molecular weight, MN, of 2,500 to 100,000; and wherein the high molecular weight polyol curative has an average of 3 to 10 hydroxyl groups per molecule; and,40 to 90 wt % of a difunctional curative. |
| 地址 |
Newark DE US |
