| 摘要 |
PROBLEM TO BE SOLVED: To provide compositions and methods for forming good silicon oxide films.SOLUTION: There are described herein compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor having the following formula: RSi(NRR)H, where Ris independently selected from a linear Cto Calkyl group, a branched Cto Calkyl group, a Cto Ccyclic alkyl group, a Cto Calkenyl group, a Cto Calkynyl group, and a Cto Caryl group; Rand Rare each independently selected from hydrogen, a Cto Clinear alkyl group, a branched Cto Calkyl group, a Cto Ccyclic alkyl group, a Cto Calkenyl group, a Cto Calkynyl group, and a Cto Caryl group, and Rand Rare linked to form a cyclic ring structure or not linked to form a cyclic ring structure; n=1, 2, 3; and m=1, 2. |
