PROCESS FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT

摘要

This invention provides a production process in which in a process for producing a magnetoresistive effect element, noble metal atoms in a re-deposited film adhered to a side wall after element isolation are efficiently removed to prevent short-circuiting due to the re-deposited film.;The noble metal atoms are selectively removed from the re-deposited film by applying an ion beam, formed using a plasma of a Kr gas or a Xe gas, to the re-deposited film formed on the side wall of the magnetoresistive effect element after the element isolation.

主权项

1. A process for producing a magnetoresistive effect element having two ferromagnetic layers and a tunnel barrier layer located between the two ferromagnetic layers, the process comprising a step of applying an ion beam to a metal material adhered to the side wall of the tunnel barrier layer,
wherein the ion beam is formed using a plasma of a Kr gas or a Xe gas.