| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using oxide semiconductor and having large On-state current.SOLUTION: A semiconductor comprises a first transistor provided on a drive circuit part; and a second transistor provided on a pixel part, and a structure of the first transistor is different from that of the second transistor. The first and second transistors are transistors with top gate structures, and in an oxide semiconductor film, a region that is not overlapped with a gate electrode, contains impurity element. In the oxide semiconductor film, the region containing impurity element, has a function as a low resistance region. In the oxide semiconductor film, the region containing impurity element, contacts with a film containing hydrogen. A conductive film which has a function as a source electrode and a drain electrode and contacts with the region having impurity element, at an opening of the film containing hydrogen, may be included. The first transistor provided on the drive circuit part, has two gate electrodes overlapping with each other with the oxide semiconductor film. |
