LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

摘要

The present invention provides a light emitting diode and a method of fabricating the same. The light emitting diode comprises: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer which is disposed between the n-type semiconductor layer and the p-type semiconductor layer, and comprises one or more pairs of barrier layers and well layers. A first barrier layer closest to the p-type semiconductor layer among the barrier layers has a first area and a second area. The second area is disposed closer to the n-type semiconductor layer than the first area. An energy band gap of the second area is smaller than an energy band gap of the first area, and larger than an energy band gap of the well layers. Therefore, a hole energy relief layer can be inserted into the barrier layers to improve efficiency of hole injection into the active layer and minimize a hole overflow phenomenon.