| 摘要 |
<p>PROBLEM TO BE SOLVED: To generate uniform plasma having high density and enable a processing target W to have a desired characteristic by subjecting the processing target W to a surface treatment using the plasma.SOLUTION: A plasma processing device 100 has a processing chamber 10 in which a processing target W is mounted, and an antenna unit 30 for generating plasma in the processing chamber 10. The antenna unit 30 has one or plural power supply terminals 311 to which high frequency power is supplied, a power supply side electrode 31 having a predetermined length, one or plural ground terminals 321 which are provided to confront the power supply side electrode 31 and connected to a ground point 42, a ground side electrode 32 having a predetermined length, and plural antenna conductors 33 bridged between the power supply side electrode and the ground side electrode(s).</p> |
