VARIABLE RANGE PHOTODETECTOR AND METHOD THEREOF

摘要

A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.

主权项

1. A photodetector for detecting photons in a predetermined wavelength range comprising:
a substrate; a p-type layer located above the substrate suitable for forming a p-metal contact thereon; a first region in which the absorption and multiplication of carriers occurs, the first region having a crystalline structure having a growth direction and a first total polarization having a magnitude and direction; a second region adjacent to the first region having a second total polarization, the second region comprising a crystalline structure having a growth direction and a second total polarization having a magnitude and direction, the first and second regions forming a first interface therebetween, the magnitudes and directions of the first and second total polarizations being such that a scalar projection of second total polarization on the growth direction is less than a scalar projection of the first total polarization projected onto the growth direction thereby creating a positive first interface charge; and a third region suitable for forming an n-metal contact thereon, the third region having a growth direction and a third total polarization with a magnitude and direction, the second and third regions forming a second interface therebetween, the third total polarization having a scalar projection on the growth direction that is greater than the scalar projection of the second polarization onto the growth direction, creating a negative second interface charge; the first and second interface charges separated by the thickness of the second region creating an electrostatic potential barrier to carriers of differing energy levels; the electrostatic potential barrier defining a predetermined wavelength range of the photodetector.