| 发明名称 |
Multiple Layer Substrate |
| 摘要 |
A substrate for an integrated circuit includes a device wafer having a raw carrier concentration and an epitaxial layer disposed over the device wafer. The epitaxial layer has a first carrier concentration. The first carrier concentration is higher than the raw carrier concentration. |
| 申请公布号 |
US2015311070(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201514792111 |
申请日期 |
2015.07.06 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Long-Shih;Yang Fu-Hsiung;Huang Kun-Ming;Lin Ming-Yi;Chu Po-Tao |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a substrate for an integrated circuit, the method comprising:
receiving a device wafer; and forming a first epitaxial layer over the device wafer, wherein the device wafer has a raw carrier concentration, the first epitaxial layer has a first carrier concentration, and the first carrier concentration ranges from 1.25 to 2.25 times the raw carrier concentration. |
| 地址 |
Hsin-chu TW |
