| 发明名称 |
SEMICONDUCTOR DEVICE, MAGNETIC MEMORY DEVICE, AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A method of fabricating a semiconductor device includes forming conductive pillars on a substrate, sequentially forming a sacrificial layer and a molding structure between the conductive pillars, forming a conductive layer on the molding structure, such that the conductive layer is connected to the conductive pillars, removing the sacrificial layer to form an air gap, removing the molding structure to form an expanded air gap, and patterning the conductive layer to open the expanded air gap. |
| 申请公布号 |
US2015311433(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201514606157 |
申请日期 |
2015.01.27 |
| 申请人 |
BAE Byoungjae;PARK Jongchul;KWON Shin;KIM Inho;SUN Changwoo |
发明人 |
BAE Byoungjae;PARK Jongchul;KWON Shin;KIM Inho;SUN Changwoo |
| 分类号 |
H01L43/12;H01L27/22;H01L43/08 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
forming conductive pillars on a substrate; sequentially forming a sacrificial layer and a molding structure between the conductive pillars; forming a conductive layer on the molding structure, such that the conductive layer is connected to the conductive pillars; removing the sacrificial layer to form an air gap; removing the molding structure to form an expanded air gap; and patterning the conductive layer to open the expanded air gap. |
| 地址 |
Hwaseong-si KR |
