STATIC RANDOM ACCESS MEMORY CELL HAVING IMPROVED WRITE MARGIN FOR USE IN ULTRA-LOW POWER APPLICATION

摘要

A static random access memory (SRAM) cell is provided with improved write margin. The SRAM cell includes: a pair of inverters cross coupled to each other and forming two storage nodes; read access switches electrically coupled between a read bit line and the two storage nodes; write access switches electrically coupled between write bit lines and two storage nodes; and supply switches electrically coupled between a supply voltage and the pair of inverters and operable, in response to a signal on at least one of the write bit lines, to selectively connect the supply voltage to at least one of the inverters in the pair of inverters. During a write operation, the supply switches operate to cut off the supply voltage to the inverter in the pair of inverters having a charged state.