| 发明名称 |
METHOD AND TOOL OF LITHOGRAPHY |
| 摘要 |
A tool and a method of lithography are provided. In various embodiments, the method of lithography includes forming a photoresist layer on a substrate. The method further includes exposing the photoresist layer to form an exposed photoresist layer. The method further includes rinsing the exposed photoresist layer. The method further includes treating the exposed photoresist layer with a chemical modifier to form a modified photoresist layer. The method further includes baking the modified photoresist layer. The method further includes developing the modified photoresist layer. |
| 申请公布号 |
US2015309414(A1) |
申请公布日期 |
2015.10.29 |
| 申请号 |
US201414263776 |
申请日期 |
2014.04.28 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN Tsung-Pao;CHUANG Sheng-Min;CHUANG Teng-Kuei |
| 分类号 |
G03F7/38;G03F7/20;G03F7/40 |
主分类号 |
G03F7/38 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of lithography, the method comprising:
forming a photoresist layer on a substrate; exposing the photoresist layer to form an exposed photoresist layer; rinsing the exposed photoresist layer; treating the exposed photoresist layer with a chemical modifier to form a modified photoresist layer; baking the modified photoresist layer; and developing the modified photoresist layer. |
| 地址 |
Hsinchu TW |
