发明名称 |
SILICON GERMANIUM THICKNESS AND COMPOSITION DETERMINATION USING COMBINED XPS AND XRF TECHNOLOGIES |
摘要 |
Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both. |
申请公布号 |
WO2015164417(A1) |
申请公布日期 |
2015.10.29 |
申请号 |
WO2015US26935 |
申请日期 |
2015.04.21 |
申请人 |
REVERA, INCORPORATED |
发明人 |
POIS, HEATH A.;LEE, WEI TI |
分类号 |
G01D21/02;G01B15/02;G01N23/223;G01N23/227 |
主分类号 |
G01D21/02 |
代理机构 |
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代理人 |
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地址 |
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