| 摘要 |
Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one precursor having the following formula:
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ R 1 n Si(NR 2 R 3 ) m H 4-m-n
wherein R 1 is independently selected from a linear C 1 to C 6 alkyl group, a branched C 2 to C 6 alkyl group, a C 3 to C 6 cyclic alkyl group, a C 2 to C 6 alkenyl group, a C 3 to C 6 alkynyl group, and a C 4 to C 10 aryl group; wherein R 2 and R 3 are each independently selected from hydrogen, a C 1 to C 6 linear alkyl group, a branched C 2 to C 6 alkyl group, a C 3 to C 6 cyclic alkyl group, a C 2 to C 6 alkenyl group, a C 3 to C 6 alkynyl group, and a C 4 to C 10 aryl group, wherein R 2 and R 3 are linked or, are not linked, to form a cyclic ring structure; n=1, 2, 3; and m=1, 2. |
