| 摘要 |
<p>A method of vapor phase epitaxy that is one embodiment of the present invention characteristically includes loading a wafer in a reaction chamber and mounting the wafer on a supporting section; heating the wafer by a heater provided under the supporting section; performing deposition on the wafer by supplying a process gas onto the wafer while rotating the wafer; detecting a temperature distribution at least in a circumferential direction at a peripheral edge section of the wafer; and determining a presence/absence of adhesion between the wafer and the supporting section based on the detected temperature distribution.</p> |
