| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a MOS transistor which can secure high breakdown voltage and pass a high-current. <P>SOLUTION: A first depletion layer 23 is formed in an N-type diffusion layer 13 resulting from a P-type diffusion layer 15. In a state where a gate voltage is not applied to a gate electrode 19, a second depletion layer 25 is formed in the N-type diffusion layer 13 resulting from a difference between a work function of the gate electrode 19 composed of P-type polysilicon and a work function of the N-type diffusion layer 13. A source contact diffusion layer 9 and a drain contact diffusion layer 11 are electrically blocked by the depletion layers 23, 25. In a state where a gate voltage is applied to the gate electrode 19, the source contact diffusion layer 9 and the drain contact diffusion layer 11 are electrically conducted via the N-type diffusion layer 13 resulting from disappearance or reduction of the second depletion layer 25. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
