Data storage device and operating method for flash memory

摘要

A data storage device and an operating method for a FLASH memory are disclosed. The disclosed data storage device includes a FLASH memory and a controller. The FLASH memory provides a storage space which is stored with a first storage type system information and a second storage type system information. Data recognition for the first storage type system information is stricter than that of the second storage type information. The controller reads the storage space of the FLASH memory and performs an error checking and correction process on data read from the storage space, and, based on the storage type system information, among the first and second storage type information, which first passes the error checking and correction process, the controller operates the FLASH memory.

主权项

1. A data storage device, comprising:
a FLASH memory, providing a storage space storing a first storage type system information and a second storage type system information, wherein, data recognition for the first storage type system information is stricter than that of the second storage type information; and a controller, coupled to the FLASH memory, reading the storage space, and performing an error checking and correction process on data read from the storage space and operating the FLASH memory based on the storage type system information, among the first and second storage type information, which first passes the error checking and correction process, wherein: the FLASH memory further comprises a read/write circuit; the read/write circuit provides a multi-level programming technique, by which a storage cell is programmed in two stages for transformation to a multi-level cell, wherein the two stages include a strong page stage and a weak page stage; the read/write circuit further provides a single level programming technique, by which a storage cell is transformed to a single level cell; the first storage type system information is programmed into the storage space by the read/write circuit via the strong page stage of the multi-level programming technique; and the second storage type system information is written into the storage space by the read/write circuit through the single level programming technique.