| 发明名称 | Semiconductor device and method for manufacturing the same | ||
| 摘要 | A method for manufacturing a semiconductor device includes forming a lower electrode pattern on a substrate, forming a first insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first insulating layer, forming an etch blocking spacer at a side of the upper electrode pattern, forming a second insulating layer on the upper electrode pattern, etching the second insulating layer to form a cavity which exposes the etch blocking spacer, and forming a contact ball in the cavity. | ||
| 申请公布号 | US9171783(B2) | 申请公布日期 | 2015.10.27 |
| 申请号 | US201313791108 | 申请日期 | 2013.03.08 |
| 申请人 | Dongbu Hitek Co., Ltd. | 发明人 | Yun Ki Jun |
| 分类号 | H01L23/488;H01L21/28;B81C1/00;H01H1/00;H01H35/02 | 主分类号 | H01L23/488 |
| 代理机构 | Central California IP Group, P.C. | 代理人 | Fortney Andrew D.;Central California IP Group, P.C. |
| 主权项 | 1. A method for manufacturing a semiconductor device comprising: forming a lower electrode pattern on a substrate; forming a first insulating layer on the lower electrode pattern; forming an upper electrode pattern on the first insulating layer; forming an etch blocking spacer at a side of the upper electrode pattern; forming a second insulating layer on the upper electrode pattern; etching the second insulating layer to form a cavity which exposes the etch blocking spacer; and forming a contact ball in the cavity. | ||
| 地址 | Bucheon-si KR | ||