High frequency capacitance-voltage nanoprobing characterization

摘要

A method of generating a capacitance-voltage (C-V) characteristic for a discrete device formed within a semiconductor structure may include exposing first and second contact regions associated with the discrete device, coupling a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz to an impedance analyzer, and coupling the high-frequency impedance probe to a first and a second atomic force probe tip. Using an atomic force microscope, the first atomic force probe tip is coupled to the exposed first contact region and the second atomic force probe tip is coupled to the exposed second contact region. The C-V characteristic for the discrete device is then measured on the impedance analyzer, whereby the impedance analyzer applies an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and second contact regions of the discrete device using the high-frequency impedance probe.

主权项

1. A method of generating a capacitance-voltage (C-V) characteristic for a discrete device formed within a semiconductor structure, the method comprising:
exposing first and second contact regions associated with the discrete device, wherein the exposing of the first and second contact regions includes:
applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency;generating, from the Argon ion source, a collimated ion beam incident on the surface of the semiconductor structure corresponding to the first and second contact regions for planar removal of layers of the surface; andcontrolling exposure of the first and second contact regions underlying the surface of the semiconductor structure using an end-point detector based on the planar removal of the layers; coupling a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz to an impedance analyzer; coupling the high-frequency impedance probe to a first and a second atomic force probe tip; coupling, using an atomic force microscope, the first atomic force probe tip to the exposed first contact region; coupling, using the atomic force microscope, the second atomic force probe tip to the exposed second contact region; and measuring the C-V characteristic for the discrete device on the impedance analyzer, the impedance analyzer applying an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and second contact regions of the discrete device using the high-frequency impedance probe.