EPITAXIAL SILICON CARBIDE WAFER AND PROCESS FOR PRODUCING SAME

摘要

The present invention addresses the problem of providing an epitaxial silicon carbide wafer having a small off-angle in which inclusion of different polytypes has been inhibited even in growth with a high C/Si ratio and with which it is possible to form a highly reliable high-withstand-voltage silicon carbide semiconductor element. This epitaxial wafer is obtained by disposing an epitaxial growth layer on a silicon carbide substrate which has an α-form crystal structure and in which the (0001) Si plane or the (000-1) C plane is inclined at an angle larger than 0° but smaller than 4°, and is characterized in that 90% or more of the surface of the silicon carbide substrate is accounted for by regions each including five to ten steps having a height of 1 nm which have been united by step bunching.