| 摘要 |
An apparatus and a process for producing a single crystal of silicon are provided. The apparatus comprises: a plate including a top side with an outer edge and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate; a device for metering granular silicon onto the plate; a first induction heating coil positioned above the plate, provided for melting the granular silicon deposited; and a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, wherein the melt is present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, wherein the distance between the middles of the adjacent elevations in a radial direction is not less than 2 mm and not more than 15 mm. |
