| 发明名称 |
CMP WAFER EDGE CONTROL OF DIELECTRIC |
| 摘要 |
Methods of forming a semiconductor device are presented. The method includes providing a wafer with top and bottom wafer surfaces. The wafer includes edge and non-edge regions. A dielectric layer having a desired concave top surface is provided on the top wafer surface. The method includes planarizing the dielectric layer to form a planar top surface of the dielectric layer. The desired concave top surface of the dielectric layer thicknesses compensates for different planarizing rates at the edge and non-edge regions of the wafer. |
| 申请公布号 |
US2015303068(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201414253874 |
申请日期 |
2014.04.16 |
| 申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
WANG Lei;RAO Xuesong;LU Wei;SEE Alex |
| 分类号 |
H01L21/3105;H01L21/762;H01L21/02 |
主分类号 |
H01L21/3105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device comprising:
providing a wafer with top and bottom wafer surfaces, the wafer includes edge and non-edge regions; providing a dielectric layer having a desired concave top surface on the top wafer surface; and planarizing the dielectric layer to form a planar top surface of the dielectric layer, wherein the concave top surface of the dielectric layer thicknesses compensates for different planarizing rates at the edge and non-edge regions of the wafer. |
| 地址 |
Singapore SG |
