METHOD FOR PROCESSING SEMICONDUCTOR WAFER

摘要

In a wafer processing method by which, by using, as a reference surface, a flat surface obtained by applying a curable material to the whole of one surface of a wafer obtained by slicing a semiconductor single-crystal ingot by using a wire saw apparatus, surface grinding is performed on the other surface of the wafer and surface grinding is performed on the one surface of the wafer by using the other surface of the wafer subjected to surface grinding as a reference surface, both surfaces of the wafer are planarized at the same time immediately after the wafer is obtained by slicing.

主权项

1. A method for processing a semiconductor wafer, the method comprising:
a slicing step of obtaining a thin disk-shaped wafer by slicing a semiconductor single-crystal ingot by using a wire saw apparatus; a double-side planarizing step of performing planarization on both surfaces of the wafer following the slicing step at the same time; an application layer forming step of forming a flat application layer by applying a curable material to the whole of one surface of the wafer following the double-side planarizing step; a first surface grinding step of placing the wafer on a table in such a way that the one surface of the planarized wafer makes contact with a reference surface of the table of a grinding device and then performing surface grinding on another surface of the wafer by the grinding device; an application layer removing step of removing the application layer following the surface grinding step from the one surface of the wafer; and a second surface grinding step of placing the wafer on the table in such a way that the other surface of the wafer from which the application layer is removed makes contact with the reference surface of the table of the grinding device and then performing surface grinding on the one surface of the wafer by the grinding device.