ION BEAM PROCESSING METHOD AND ION BEAM PROCESSING APPARATUS

摘要

An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.

主权项

1. An ion beam processing method for processing a substrate placed in a processing chamber linked to a plasma generation chamber by irradiating the substrate with an ion beam extracted and formed from plasma generated in the plasma generation chamber having an internal space, comprising:
applying a positive voltage for extracting ions into the processing chamber to a first electrode disposed facing the internal space, in a portion of linkage between the plasma generation chamber and the processing chamber, under a first condition where irradiation of the substrate with the ion beam is blocked off by a shutter; generating the plasma in the internal space under the first condition; forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode disposed closer to the processing chamber than the first electrode, in the portion of linkage; and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.