METHOD FOR FORMING OF SILICEOUS FILM AND SILICEOUS FILM FORMED USING SAME

摘要

A siliceous film having high purity and a low etching rate is formed by (a) a step for forming a siliceous film on a substrate by coating a solution composed of a polysilazane, e.g., perhydropolysilazane on a substrate and then hardening (curing) the solution in an oxidizing atmosphere, or by coating a silica solution formed by a sol-gel method on a substrate, and (b) a step for heating the siliceous film in an inert gas environment containing a nitrogen-containing compound such as an alkylamine having a base dissociation constant (pKb) no greater than 4.5, or a halogen-containing compound in which the bond energy of a halogen atom such as F2, Br2, or NF3 is no greater than 60 kcal/mol, in order to anneal the film.

主权项

1. A method for forming a siliceous film comprising the steps of
(a) forming a siliceous film on a substrate by applying a polysilazane solution on the substrate and curing it in an oxidation atmosphere or by applying a silica solution prepared by a sol-gel method; and (b) heating and annealing the siliceous film in an inert atmosphere containing a nitrogen-containing compound having the base dissociation constant (pKb) of 4.5 or less or a halogen-containing compound having the binding energy of a halogen atom of 60 kcal/mol or less.