发明名称 THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide a thin film transistor which exhibits favorable characteristics by taking advantages of high mobility of a low molecular semiconductor material in a printing method in an organic semiconductor thin film transistor; and provide a manufacturing method of the thin film transistor.SOLUTION: A thin film transistor has at least a gate electrode, a gate insulation layer, a source electrode, a drain electrode, a first semiconductor layer, a second semiconductor layer and a protection layer on a substrate. The first semiconductor layer is composed of a crystalline low-molecular organic semiconductor material, and the second semiconductor layer is composed of a high-molecular semiconductor material.</p>
申请公布号 JP2015185789(A) 申请公布日期 2015.10.22
申请号 JP20140063174 申请日期 2014.03.26
申请人 TOPPAN PRINTING CO LTD 发明人 IKEDA NORIAKI
分类号 H01L29/786;H01L51/05 主分类号 H01L29/786
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