发明名称 IMAGE SENSOR PIXEL HAVING STORAGE GATE IMPLANT WITH GRADIENT PROFILE
摘要 A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.
申请公布号 US2015303235(A1) 申请公布日期 2015.10.22
申请号 US201414255535 申请日期 2014.04.17
申请人 OMNIVISION TECHNOLOGIES, INC. 发明人 Yang Dajiang;Chen Gang;Fu Zhenhong;Mao Duli;Webster Eric A. G.;Hu Sing-Chung;Tai Dyson H.
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A pixel cell, comprising: a storage transistor disposed in a semiconductor substrate, the storage transistor including a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate; a transfer transistor disposed in the semiconductor substrate and coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor, the transfer transistor including a transfer gate disposed over the semiconductor substrate; and an output transistor disposed in the semiconductor substrate and coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node, the output transistor including an output gate disposed over the semiconductor substrate.
地址 Santa Clara CA US