METHOD AND STRUCTURE FOR FINFET DEVICE

摘要

The present disclosure provides a method for fabricating a fin-like field-effect transistor (FinFET). The method includes forming a first fin structures over a substrate, forming a patterned oxidation-hard-mask (OHM) over the substrate to expose the first fin structure in a first gate region of a n-type FET region, forming a semiconductor oxide feature in a middle portion of the first fin structure in the first gate region, forming a second fin structure in a PFET region, forming dummy gates, forming source/drain (S/D) features, replacing the dummy gates by a first high-k/metal gate (HK/MG) in the NFET region and a second HK/MG in the PFET region.

主权项

1. A method, comprising:
providing a substrate having an n-type fin-like field-effect transistor (NFET) region and a p-type fin-like field-effect transistor (PFET) region; forming first fin structures in the NFET region and the PFET region; forming a patterned oxidation-hard-mask (OHM) over the NFET region and PFET region to expose the first fin structure in a first gate region of the NFET region; forming a semiconductor oxide feature in a middle portion of the first fin structure in the first gate region; forming a second fin structure in the PFET region after covering the NFET with a hard mask layer; forming dummy gates in the first gate region and a second gate region in the second fin structure; forming a first source/drain (S/D) features in a first S/D region in the first fin structure in the NFET region; forming a second S/D feature in a second S/D region in the second fin structure in the PFET region; replacing the dummy gates by a first high-k/metal gate (HK/MG) in the NFET region, including wrapping over an upper portion of the first fin structure in the first gate region; and replacing the dummy gates by a second HK/MG in the PFET region, including wrapping over an upper portion of the second fin structure in the second gate region.