| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
| 摘要 |
Provided is a technique of forming a film containing a first element and a second element on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a hydro-based precursor containing the first element and a halogen-based precursor containing the second element into a process chamber accommodating a substrate to confine the hydro-based precursor and the halogen-based precursor in the process chamber; (b) maintaining a state where the hydro-based precursor and the halogen-based precursor are confined in the process chamber; and (c) exhausting the process chamber. |
| 申请公布号 |
US2015303051(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201514671504 |
申请日期 |
2015.03.27 |
| 申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
TAKEDA Tsuyoshi |
| 分类号 |
H01L21/02;C23C16/52;C23C16/44;H01L21/285;C23C16/455 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising forming a film containing a first element and a second element on a substrate by performing a cycle a predetermined number of times, the cycle including:
(a) supplying a hydro-based precursor containing the first element and a halogen-based precursor containing the second element into a process chamber accommodating a substrate to confine the hydro-based precursor and the halogen-based precursor in the process chamber; (b) maintaining a state where the hydro-based precursor and the halogen-based precursor are confined in the process chamber; and (c) exhausting the process chamber. |
| 地址 |
Tokyo JP |
