| 发明名称 |
MOS Capacitor Optical Modulator with Transparent Conductive and Low-Refractive-Index Gate |
| 摘要 |
A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other. |
| 申请公布号 |
US2015301363(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201514689601 |
申请日期 |
2015.04.17 |
| 申请人 |
Futurewei Technologies, Inc. |
发明人 |
Chen Hongmin;Xu Qianfan;Yang Li;Shen Xiao;Zheng Dawei;Bai Yusheng;Lei Hongbing;Dudley Eric |
| 分类号 |
G02F1/025;H01L29/167;G02B6/13;H01L29/06;H01L29/66;H01L29/94;H01L29/49;H01L29/51 |
主分类号 |
G02F1/025 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal-oxide semiconductor (MOS) capacitor optical modulator, comprising:
a doped semiconductor layer having a waveguide structure; a dielectric layer disposed over the waveguide structure of the doped semiconductor layer; a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon; and a metal contact disposed over the gate region. |
| 地址 |
Plano TX US |
