| 摘要 |
A composite device and a switched-mode power supply. A first enhancement-mode MOS device (608) and a depletion-mode MOS device (608') are integrated into the composite device. The composite device comprises: an epitaxial region (606) of a first doping type, a first well region (602) and a second well region (602') that are formed in parallel on a front side of the epitaxial region (606), a first doped region (605) of the first doping type that is formed in the first well region (602), a gate (604) of the first enhancement-mode MOS device (608), a second doped region (605') of the first doping type that is formed in the second well region (602'), a trench region (613) of the first doping type that extends from a boundary of the second well region (602') to a boundary of the second doped region (605'), and a gate (604') of the depletion-mode MOS device (608'). The switched-mode power supply comprises the composite device. The present invention helps to lower the process complexity and reduce the chip area and cost, and is suitable for high-power application scenarios. |
