RADIO FREQUENCY POWER AMPLIFIER MODULE AND A RADIO FREQUENCY POWER AMPLIFIER PACKAGE

摘要

A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.

主权项

1. A radio frequency power amplifier module, comprising:
a die comprising a radio frequency power transistor, the radio frequency power transistor comprising a transistor control terminal, a transistor output terminal and a transistor reference terminal; a plurality of module terminals at a first side of the die, for electrically connecting the die to an electronic circuit external to the radio frequency power amplifier module, the plurality of module terminals comprising: a module input terminal electrically coupled to the transistor control terminal, a module output terminal electrically coupled to the transistor output terminal and at least two module reference terminals being electrically coupled to the transistor reference terminal, the module input terminal and one of the at least two module reference terminals being located at a first lateral side of the module, and the module output terminal and another one of the at least two module reference terminals being located at a second lateral side of the module opposite to the first lateral side, an electrically isolating layer and a heat conducting element, both being arranged at a second side of the die opposite to the first side, the heat conducting element having a die-facing surface which is physically separated and electrically isolated from the die by the electrically isolating layer, the die being in thermal contact with the heat conducting element via the electrically isolating layer for transferring heat generated during operation of the power amplifier transistor away from the die to the heat conducting element, and the electrically isolating layer holding the die relative to the heat conducting element.