| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of current leakage in an impurity region that surrounds a transistor.SOLUTION: A semiconductor device comprises field plates FP1 and a plurality of conductive films CF which are alternately arranged in a region of a second conductivity type region IDF, which overlaps a part which extends from a first circuit region HSR side toward a second circuit region LSR side in plan view, from the first circuit region HSR side toward the second circuit region LSR side in plan view. In the region, potentials of the field plates FP1 and potentials of the plurality of conductive films CF decrease with distance from the first circuit region HSR toward the second circuit region LSR. Further, the potential of at least one conductive film CF on the second circuit region LSR side in plan view among the plurality of conductive films CF is equal to or less than the potential of the field plate FP1 adjacent to the conductive film CF concerned. In addition, the conductive film CF covers at least a part of the second conductivity type region IDF without space, in an extension direction of the second conductivity type region IDF. |
