摘要 |
<p>PROBLEM TO BE SOLVED: To excellently dry a substrate surface while suppressing or preventing pattern collapse.SOLUTION: The substrate processing apparatus includes: a heater that, by heating a substrate W held on a hot plate at a temperature equal to or higher than a boiling point of a process liquid in a state where the whole top face area of the substrate W is covered by a liquid film of the process liquid, causes the process liquid to evaporate and forms a gas phase between the liquid film of the process liquid and a top face of the substrate W; and an upper gas nozzle 57 that forms a dry region from which the process liquid is removed in part of a region on a top face of the substrate W by discharging a gas toward the top face of the substrate W in a state where a gas phase is formed between the liquid film of the process liquid and the top face of the substrate W.</p> |