| 摘要 |
The present invention relates to a method of manufacturing a semiconductor device, which is capable of easily controlling an etching process when a contact hole is formed. The semiconductor device includes a semiconductor layer which is formed on an insulation surface at least, a first insulation layer which is formed on the semiconductor layer, a gate electrode which is formed on the first insulation layer, and a second insulation layer which is formed on the gate electrode. The insulation surface is partially exposed by forming an opening part at least on the semiconductor layer and the second insulation layer. A conductive layer is formed on the second insulation layer by interposing the opening part. At this time, the conductive layer is electrically connected to the semiconductor layer on the lateral side of the opening part formed on the semiconductor layer. |
